FQP5N60C, FQPF5N60C دیتاشیت

FQP5N60C, FQPF5N60C

مشخصات دیتاشیت

نام دیتاشیت FQP5N60C, FQPF5N60C
حجم فایل 1063.379 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت FQP5N60C, FQPF5N60C

دانلود دیتاشیت

سایر مستندات

FQPF5N60C 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQPF5N60C
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 33W
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 670pF@25V
  • Continuous Drain Current (Id): 4.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,2.25A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FQPF5
  • detail: N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-220F

محصولات مشابه